Integrated Fan-Out Structure and Method of Forming
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, An-Jhih Su, Tsung-Shu Lin
Life of this patent
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Abstract
Semiconductor devices and methods of forming are provided. A molding compound extends along sidewalls of a first die and a second die. A redistribution layer is formed over the first die, the second die, and the molding compound. The redistribution layer includes a conductor overlying a gap between the first die and the second die. The conductor is routed at a first angle over an edge of the first die. The first angle is measured with respect to a straight line that extends along a shortest between the first die and the second die, and the first angle is greater than 0.
Claims20
A device, comprising:
- a first die;
- a second die;
- a molding material extending between the first die and the second die;
- and
- a redistribution layer overlying the first die and the second die, the redistribution layer including a conductor continuously extending, in a plan view, from a sidewall of the first die that is closest to the second die to a sidewall of the second die that is closest to the first die, the conductor being routed at a first angle over an edge of the first die, the first angle being measured in a plan view and with respect to a shortest line between the first die and the second die, and the first angle being greater than 0.
A device, comprising:
- a first die;
- a second die positioned next to the first die;
- a first dielectric layer overlying the first die and the second die;
- a conductor extending in the first dielectric layer, wherein the conductor is continuous, in a plan view, between a sidewall of the first die and a sidewall of the second die, and wherein the conductor is routed at a first angle over an edge of the first die, the first angle being measured in the plan view with respect to the sidewall of the first die, and the first angle being non-perpendicular.
A device, comprising:
- a first die, the first die comprising a first substrate and a first dielectric layer overlying the first substrate, an edge of the first substrate being offset from an edge of the first dielectric layer;
- a second die positioned next to the first die, the second die comprising a second substrate and a second dielectric layer overlying the second substrate, an edge of the second substrate being offset from an edge of the second dielectric layer;
- a redistribution layer overlying the first die and the second die, the redistribution layer comprising a conductor that continuously extends, in a plan view, between a sidewall of the first die and a sidewall of the second die, wherein the conductor is routed across the sidewall of the first die at a first angle, wherein the first angle is measured in the plan view and with respect to a shortest line between the first die and the second die, and the first angle being greater than 0.
Dependencies are inferred from the claim text.