Integrated Passive Device for RF Power Amplifier Package

An integrated passive die for use in an RF power amplifier package comprising:

• a first semiconductor die, wherein the first semiconductor die comprises an RF power transistor that has an output capacitance (Cds) and is configured to amplify signals at an operational frequency;
• an impedance network comprising:
• a first inductive element (L1) having a first terminal and a second terminal, the first terminal being electrically connected to an output of the RF transistor;
• a resonance unit being electrically connected to the second terminal of L1;
• and
• a second capacitive element (C2) electrically connected in between the resonance unit and a ground terminal;
• wherein the resonance unit comprises (i) a second inductive element (L2) electrically connected in between C2 and L1 and (ii) a first capacitive element (C1) having a first terminal and a second terminal, the first terminal of C1 being electrically connected to the second terminal of L1;
• wherein the capacitance of C2 is larger than the capacitance of C1;
• wherein the second terminal of C1 is electrically connected to C2;
• wherein L1, C1, and L2 are chosen such that, at or close to the operational frequency:
• an impedance of L2 causes more RF current to flow through C1 than through L2;
• and
• an inductance formed by the connection of C1 and L1 has an effective inductance that is substantially equal to an inductance of L1, the effective inductance resonating with Cds;
• wherein the RF power transistor is configured to be fed using a feed inductance (Lfeed), and wherein C2 is configured to resonate with Lfeed at a first resonance frequency that is smaller than the operational frequency;
• wherein L2 is configured to resonate with C1 at a second resonance frequency, wherein the first resonance frequency is smaller than the second resonance frequency and wherein the second resonance frequency is smaller than the operational frequency;
• and
• wherein the resonance circuit comprises a resistive element for damping signals oscillating at the first and second resonance frequencies.

A mobile telecommunications base station comprising an RF power amplifier package, wherein the RF power amplifier package of the mobile telecommunications base station comprises:

• a package;
• a first semiconductor die arranged inside the package, wherein the first semiconductor die comprises an RF power transistor that has an output capacitance (Cds) and is configured to amplify signals at an operational frequency;
• an impedance network arranged inside the package and comprising:
• a first inductive element (L1) having a first terminal and a second terminal, the first terminal being electrically connected to an output of the RF transistor;
• a resonance unit being electrically connected to the second terminal of L1;
• and
• a second capacitive element (C2) electrically connected in between the resonance unit and a ground terminal;
• wherein the resonance unit comprises (i) a second inductive element (L2) electrically connected in between C2 and L1 and (ii) a first capacitive element (C1) having a first terminal and a second terminal, the first terminal of C1 being electrically connected to the second terminal of L1;
• wherein the capacitance of C2 is larger than the capacitance of C1;
• wherein the second terminal of C1 is electrically connected to C2;
• wherein L1, C1, and L2 are chosen such that, at or close to the operational frequency:
• an impedance of L2 causes more RF current to flow through C1 than through L2;
• and
• an inductance formed by the connection of C1 and L1 has an effective inductance that is substantially equal to an inductance of L1, the effective inductance resonating with Cds;
• wherein the RF power transistor is configured to be fed using a feed inductance (Lfeed), and wherein C2 is configured to resonate with Lfeed at a first resonance frequency that is smaller than the operational frequency;
• wherein L2 is configured to resonate with C1 at a second resonance frequency, wherein the first resonance frequency is smaller than the second resonance frequency and wherein the second resonance frequency is smaller than the operational frequency;
• and
• wherein the resonance circuit comprises a resistive element for damping signals oscillating at the first and second resonance frequencies.