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US 2018/0025990 A1Published application
Prevention of premature breakdown of interline porous dielectrics in an integrated circuit
AssigneeSTMicroelectronics (Rousset) SAS
InventorsChristian Rivero, Pascal Fornara, Jean-Philippe Escales
Life of this patent
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Abstract
A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.
Claims24
A process, comprising:
- forming two electrically conductive elements of an interconnect portion of an integrated circuit that are separated from each other by a porous portion of a dielectric region;
- and
- inserting at least one non-porous dielectric barrier between the porous portion of said dielectric region and at least one of the two electrically conductive elements to protect the integrated circuit from electrical conduction assisted by the presence of defects located in the dielectric region separating the two electrically conductive elements;
- wherein inserting comprises providing the at least one non-porous dielectric barrier along a side wall of the porous portion of the dielectric region but not extending along a bottom surface of said at least one of the two electrically conductive elements.
1 more element
A process, comprising:
- forming an opening in a porous material dielectric region, said opening having a side wall and a bottom wall;
- depositing a non-porous dielectric barrier on said side wall and said bottom wall;
- completely removing a portion of the non-porous dielectric barrier along the bottom wall;
- filling the opening with metal material to form an electrically conductive element that is laterally separated from an upper portion of the porous material dielectric region by the non-porous dielectric barrier along the side wall but is in contact with a lower portion of the porous material dielectric region along the bottom wall.
1 more element
Dependencies are inferred from the claim text.