Formation of liner and metal conductor
AssigneeInternational Business Machines Corporation
InventorsDaniel C Edelstein, Chih-Chao Yang
Life of this patent
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Abstract
An integrated circuit device includes a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom. A liner which is an alloy of a first metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric and is created by an anneal and reflow process. The first metal having a first conductivity in a pure form. A second metal layer fills the set of conductive line trenches, the second metal having a second conductivity higher than the first conductivity.
Claims12
An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom;
- a liner which is an alloy of a first metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric, created by an anneal and reflow process, the first metal having a first conductivity in a pure form;
- and
- a second metal layer filling the set of conductive line trenches, the second metal having a second conductivity higher than the first conductivity.
An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom, wherein the vertical sidewalls and horizontal bottom have an element enriched surface layer in which the concentration of a selected element is increased relative to a remainder of the dielectric layer;
- a liner which is an alloy of a first metal and the selected element formed at interfaces of the metal layer and a surface of the dielectric, the first metal having a first conductivity in a pure form;
- and
- a second metal layer filling the set of conductive line trenches, the second metal having a second conductivity higher than the first conductivity.
Dependencies are inferred from the claim text.