Fan-out package structure

A semiconductor package structure, comprising:

• a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises:
• an inter-metal dielectric (IMD) layer;
• a first conductive layer disposed at a first layer-level of the IMD layer;
• and
• a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer;
• a molding compound covering the first surface of the RDL structure;
• a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure;
• and
• a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.

A semiconductor package structure, comprising:

• a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises:
• an inter-metal dielectric (IMD) layer;
• a first conductive layer disposed at a first layer-level of the IMD layer, wherein the first conductive layer has an antenna pattern;
• a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer, wherein the second conductive layer has a ground shielding pattern;
• and
• a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer;
• a molding compound covering the first surface of the RDL structure;
• a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure;
• and
• a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.