US 2018/0025984 A1 · SEMICONDUCTOR DEVICE HAVING STRUCTURE FOR IMPROVING VOLTAGE DROP AND DEVICE INCLUDING THE SAME

Abstract

A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.

Claims20

Dependent claims

A system-on-chip comprising:

a processor;
and
a hardware component connected to the processor,
wherein at least one of the processor and the hardware component comprises:
a semiconductor substrate;
and
a plurality of metal layers formed above the semiconductor substrate, and
wherein a first metal layer among the plurality of metal layers comprises:
a plurality of first power rails which extend in a first direction and transmit a first voltage;
a plurality of second power rails which extends in the first direction and transmit a second voltage;
and
a first conductor which is coupled to one end of each of the first power rails and extends in a second direction.

9 more elements

A mobile device comprising:

a processor;
a memory configured to communicate with the processor;
and
a hardware component configured to communicate with the processor,
wherein at least one of the processor, the memory, and the hardware component comprises:
a semiconductor substrate;
and
a plurality of metal layers formed above the semiconductor substrate, and
wherein a first metal layer among the plurality of metal layers comprises:
a plurality of first power rails which extend in a first direction and transmit a first voltage;
a plurality of second power rails which extends in the first direction and transmit a second voltage;
and
a first conductor which is coupled to one end of each of the first power rails and extends in a second direction.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/721,020Filed 29 Sep 2017

Priority

KR 10-2015-010100716 Jul 2015

Published

25 Jan 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10W 20/427
Characterised by their conductive parts: power or ground buses
H10W 20/42
Characterised by their conductive parts: vias, e.g. via plugs
H10P 14/40
Formation of materials, e.g. in the shape of layers or pillars: of conductive or resistive materials
H10W 20/43
Characterised by their conductive parts: layouts of interconnections

Semiconductor device having structure for improving voltage drop and device including the same

Life of this patent

Semiconductor device having structure for improving voltage drop and device including the same

Life of this patent

Abstract

Claims20