Designable channel finfet fuse
AssigneeInternational Business Machines Corporation
InventorsKeith E. Fogel, Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek
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AssigneeInternational Business Machines Corporation
InventorsKeith E. Fogel, Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek
Estimating the term…
On-chip, doped semiconductor fuse regions compatible with FinFET CMOS fabrication are formed from the channel regions of selected fins. One or more fin dimensions are optionally reduced in selected channel regions of the fins following dummy gate removal, such as height and/or width. The channel regions from which the fuse regions are formed are doped to provide electrical conductivity, amorphized using ion implantation, and then annealed to form substantially polycrystalline fuse regions. Source/drain regions function as terminals for the fuse regions.
A monolithic structure, comprising:
Dependencies are inferred from the claim text.