US 2018/0025982 A1 · SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL ONE-TIME-PROGRAMMABLE FUSE

Abstract

A vertical OTP fuse formed in a semiconductor device has a substrate and an insulating layer formed over the substrate with an opening through the insulating layer extending to the substrate. A conductive layer, such as silicide, is formed over a sidewall of the opening. A resistive material, such as polysilicon, is deposited within the opening over the first conductive layer to form a first vertical OTP fuse. A plurality of vertical OTP fuses can be arranged in an array. A PN junction diode or transistor is formed in the substrate aligned with the first vertical OTP fuse. A second conductive layer is formed over the first vertical OTP fuse. The first vertical OTP fuse can be disposed between the second conductive layer and a third conductive layer. A second vertical OTP fuse can be formed over the first vertical OTP fuse for redundancy.

Claims20

Dependent claims

A method of making a semiconductor device, comprising:

providing a substrate;
forming a first insulating layer over the substrate;
forming a first opening through the first insulating layer;
forming a first conductive layer over a sidewall of the first opening;
and
depositing a resistive material within the first opening over the first conductive layer, wherein the first conductive layer and resistive material form a vertical one-time-programmable (OTP) fuse.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/644,418Filed 7 Jul 2017

Priority

22 Jul 2016

Published

25 Jan 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10W 20/493
Adaptable interconnections, e.g. fuses or antifuses: fuses, i.e. interconnections changeable from conductive to non-conductive
G11C 17/16
In which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of…
G11C 17/18
In which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of…
H10B 20/25
Programmable ROM [PROM] devices comprising field-effect components: one-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Semiconductor device and method of forming vertical one-time-programmable fuse

Life of this patent

Semiconductor device and method of forming vertical one-time-programmable fuse

Life of this patent

Abstract

Claims20