Method of making electrical antifuse
AssigneeInternational Business Machines Corporation
InventorChih-Chao Yang
Life of this patent
Estimating the term…
Abstract
An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further includes an antifuse material layer comprising a phase change material alloy of tantalum and nitrogen. A first surface of the antifuse material layer is present in direct contact with the first electrode. A second electrode is present in direct contact with a second surface of the antifuse material layer that is opposite the first surface of the antifuse material layer.
Claims20
A method of forming an antifuse comprising:
- forming an antifuse material layer of a phase change material alloy of tantalum and nitrogen, the phase change material alloy having dielectric properties and an orthorhombic phase prior to said antifuse structure being programmed, wherein the phase change material is programmed thermally.
A method of forming an antifuse comprising:
- forming an antifuse material layer of a phase change material alloy of tantalum and nitrogen, wherein the phase change material is programmed thermally;
- and
- forming an electrically conductive feature in direct contact with the phase change material alloy, wherein the electrically conductive feature thermally heats the antifuse material layer.
Dependencies are inferred from the claim text.