Simultaneous formation of liner and metal conductor
AssigneeInternational Business Machines Corporation
InventorsDaniel C Edelstein, Chih-Chao Yang
Life of this patent
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Abstract
An integrated circuit device having a substrate including a dielectric layer is patterned with a set of conductive line trenches. Each conductive line trench of the conductive line pattern having parallel vertical sidewalls and a horizontal bottom. A metal fills the set of conductive line trenches, wherein the metal fill is created by an anneal and reflow process. A liner which is an alloy of the metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric, created simultaneously with the metal fill by the anneal and reflow process.
Claims10
An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench of the conductive line pattern having parallel vertical sidewalls and a horizontal bottom;
- a metal filling the set of conductive line trenches, wherein the metal fill is created by an anneal and reflow process;
- and
- a liner which is an alloy of the metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric, created simultaneously with the metal fill by the anneal and reflow process.
An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom, wherein the vertical sidewalls and horizontal bottom have an element enriched surface layer in which the concentration of a selected element is increased relative to a remainder of the dielectric layer;
- a metal filling the set of conductive line trenches;
- and
- a liner which is an alloy of the metal and the selected element formed at interfaces of the metal layer and a surface of the dielectric.
Dependencies are inferred from the claim text.