Back to results
US 2018/0025952 A1Published application
Reverse Decoration for Defect Detection Amplification
AssigneeKLA-Tencor Corporation
InventorsPhilip Measor, Robert Danen, Paul MacDonald
Life of this patent
Estimating the term…
Abstract
Reverse decoration can be used to detect defects in a device. The wafer can include NAND stacks or other devices. The defect can be a channel bridge, a void, or other types of defects. Reverse decoration can preserve a defect and/or can improve defect detection. A portion of a layer may be removed from a device. A layer also may be added to the device, such as on the defect, and some of the layer may be removed.
Claims18
A method comprising:
- applying a layer of a material on a surface of a wafer such that a defect on the wafer is covered with the layer, wherein the material is configured to amplify detection of the defect;
- and
- removing a first portion of the layer, wherein a second portion of the layer is configured to remain disposed on the defect after the removing.
A method comprising:
- applying a layer of a material on a surface of a wafer such that a defect on the wafer is covered with the layer, wherein the surface of the wafer includes a plurality of NAND stacks, and wherein the material is configured to amplify detection of the defect;
- and
- removing a first portion of the layer, wherein a second portion of the layer is configured to remain disposed on the defect after the removing.
A method comprising:
- providing a wafer including a NAND stack with a defect, wherein the defect is a void in a wall of the NAND stack;
- removing some tungsten from the NAND stack, wherein removing the tungsten is configured to expose a surface of a pillar in the NAND stack;
- removing silicon from the NAND stack, wherein removing the silicon forms a void in the pillar;
- and
- removing a remainder of the tungsten from the NAND stack.
2 more elements
Dependencies are inferred from the claim text.