Method of manufacturing integrated circuit device

A method of manufacturing an integrated circuit device, the method comprising:

• forming a device isolation trench in a substrate, the device isolation trench defining a plurality of active regions;
• forming a device isolation layer that fills the device isolation trench around the plurality of active regions;
• forming a plurality of mask line patterns on the plurality of active regions and the device isolation layer, the plurality of mask line patterns extending parallel to one another in a first direction and being separated from one another by a predefined distance;
• forming a plurality of space lines and a plurality of line patterns that define the plurality of space lines by etching the plurality of active regions and the device isolation layer with the plurality of mask line patterns as an etch mask;
• forming at least one support structure that contacts an upper surface of the plurality of mask line patterns and extends on the plurality of mask line patterns in a second direction that intersects the first direction;
• and
• forming a word line structure that fills the plurality of space lines while the at least one support structure contacts the upper surface of the plurality of mask line patterns.

A method of manufacturing an integrated circuit device, the method comprising:

• providing a substrate with a pattern structure, the pattern structure comprising a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween;
• forming a sacrificial pattern on the substrate, the sacrificial pattern filling the spaces between the plurality of first patterns and formed of a different material from a material of the pattern structure;
• forming at least one support structure on upper surfaces of the pattern structure and extending on the pattern structure and the sacrificial pattern in a second direction that crosses the first direction, wherein the at least one support structure is formed of a different material from a material of the sacrificial pattern;
• removing the sacrificial pattern from the spaces in the plurality first patterns;
• forming, while the at least one support structure contacts the upper surface of the pattern structure, a buried layer that fills the spaces between the plurality of first patterns;
• and
• removing the at least one support structure from the pattern structure so that only the buried layer remains in the spaces between the plurality of first patterns.