US 2018/0025946 A1 · FINFET Channel on Oxide Structures and Related Methods

Abstract

A method for fabricating a semiconductor device having a substantially undoped channel region includes forming a plurality of fins extending from a substrate. In various embodiments, each of the plurality of fins includes a portion of a substrate, a portion of a first epitaxial layer on the portion of the substrate, and a portion of a second epitaxial layer on the portion of the first epitaxial layer. The portion of the first epitaxial layer of each of the plurality of fins is oxidized, and a liner layer is formed over each of the plurality of fins. Recessed isolation regions are then formed adjacent to the liner layer. The liner layer may then be etched to expose a residual material portion (e.g., Ge residue) adjacent to a bottom surface of the portion of the second epitaxial layer of each of the plurality of fins, and the residual material portion is removed.

Claims20

Dependent claims

A semiconductor device, comprising:

a plurality of fin elements extending from a substrate, wherein each of the plurality of fin elements includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer, wherein the second semiconductor layer includes a bottom surface that defines a first horizontal plane;
a recessed isolation region adjacent to the plurality of fin elements, wherein the recessed isolation region includes a top surface adjacent to the second semiconductor layer, wherein the top surface defines a second horizontal plane, and wherein the second horizontal plane is disposed above the first horizontal plane;
and
a gate stack formed over the second semiconductor layer.

1 more element

Dependencies are inferred from the claim text.

FINFET Channel on Oxide Structures and Related Methods

Life of this patent

FINFET Channel on Oxide Structures and Related Methods

Life of this patent

Abstract

Claims20