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US 2018/0025939 A1Published application
Selective deposition of tungsten
AssigneeASM IP Holding B.V.
InventorsAlexey Y. Kovalgin, Mengdi Yang, Antonius A.I. Aarnink, Rob A.M. Wolters
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Abstract
A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.
Claims20
A method of selectively forming a film comprising metal, the method comprising:
- providing a substrate for processing in a reaction chamber and a hot wire element for contacting at least a gas;
- exposing the substrate to a metal precursor;
- and
- exposing the substrate to a gas which has been exposed to a vicinity of the hot wire;
- wherein the substrate comprises at least two different materials and the metal film is selectively formed in one of the surfaces.
2 more elements
Dependencies are inferred from the claim text.