Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorJONGSEON AHN
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include forming an insulating layers on a substrate, forming a plurality of holes in an upper portion of the insulating layer, forming a mask layer having openings exposing at least a first set of the plurality of holes, etching a lower portion of the insulating layer exposed by one of the plurality of holes which is exposed by the mask layer to form a through hole in the insulating layer in combination with the one of the plurality of holes, and forming a conductive structure in the through hole.
Claims14
1-7. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulating layer and a second insulating layer on a substrate to which an interlayer insulating layer including a lower contact is provided;
- forming an interconnection contact hole in the second insulating layer, the interconnection contact hole positioned over the lower contact to vertically overlap the lower contact;
- forming a mask layer having an opening on the first insulating layer, the opening vertically overlapping the lower contact;
- etching the first insulating layer exposed by the opening to form a contact hole exposing the lower contact;
- removing the mask layer;
- and
- forming an interconnection structure contacting the lower contact in the contact hole and the interconnection contact hole.
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating layer on a substrate;
- forming a plurality of holes in an upper portion of the insulating layer;
- forming a mask layer having openings exposing at least a set of the plurality of holes;
- etching a lower portion of the insulating layer exposed by one of the plurality of holes which is exposed by the mask layer to form a through hole in the insulating layer in combination with the one of the plurality of holes;
- and
- forming a conductive structure in the through hole.
Dependencies are inferred from the claim text.