US 2018/0025935 A1 · SEMICONDUCTOR STRUCTURE HAVING AN ISOLATION LAYER FOR REDUCING PARASITIC EFFECT

Abstract

A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.

Claims17

Dependent claims

A semiconductor structure, comprising:

a first well;
a semiconductor element formed on or contacting the first well;
a second well, the first well being formed on the second well;
and
a first isolation layer configured to reduce a parasitic effect between the first well and the second well, wherein a bottom of the first isolation layer is at least as deep as a bottom of the first well, and the first isolation layer substantially forms a first ring structure around the first well;
wherein a doping type of the second well is different from a doping type of the first well.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/603,480Filed 24 May 2017

Priority

TW 10512312322 Jul 2016

Published

25 Jan 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10D 62/106
By having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination…
H10W 10/051
Manufacture or treatment: of isolation region based on field-effect
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Semiconductor structure having an isolation layer for reducing parasitic effect

Life of this patent

Semiconductor structure having an isolation layer for reducing parasitic effect

Life of this patent

Abstract

Claims17