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US 2018/0025934 A1Published application
Semiconductor integrated circuit device having electrostatic discharge protection circuit
AssigneeSK hynix Inc.
InventorYun Seok HONG
Life of this patent
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Abstract
A semiconductor integrated circuit device may include a first electrostatic discharge (ESD) protecting circuit and a second ESD protecting circuit. The first ESD protecting circuit may include at least one resistance changeable device connected between a power voltage line and a data pad to discharge an electrostatic. The second ESD protecting circuit may include at least one resistance changeable device connected between the first ESD protecting circuit and a ground voltage line.
Claims20
A semiconductor integrated circuit device comprising:
- a first electrostatic discharge (ESD) protecting circuit including at least one resistance changeable device connected between a power voltage line and a data pad to discharge electrostatic charges;
- and
- a second ESD protecting circuit including at least one resistance changeable device connected between the first ESD protecting circuit and a ground voltage line.
A semiconductor integrated circuit device comprising:
- a power voltage line connected to a power voltage pad;
- a ground voltage line connected to a ground voltage pad;
- a first electrostatic discharge (ESD) protecting circuit connected to a data pad and the power voltage line;
- a second ESD protecting circuit connected to the data pad, the first ESD protecting circuit, and the ground voltage line;
- and
- a charge device model (CDM) discharge protecting circuit connected between an internal circuit and a connection node of the first and second ESD protecting circuits,
- wherein at least one of the first ESD protecting circuit, the second ESD protecting circuit, and the CDM discharge protecting circuit comprises at least one resistance changeable device.
4 more elements
Dependencies are inferred from the claim text.