Dry etching method
AssigneeBoe Technology Group Co., Ltd.
InventorsYinghai MA, Liangjian LI, Yueping ZUO
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Abstract
A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.
Claims20
A dry etching method, comprising:
- performing at least two etching steps within an etch chamber;
- and
- adding plasma into the etch chamber between any two successive etching steps, wherein the plasma neutralizes electrons accumulated on a side wall of an etching trench.
The dry etching method according to claim I, wherein the two successive etching steps comprise a main etching step and an over etching step;
- and
- wherein the dry etching method further comprises injecting a protective gas into the etch chamber for processing between the main etching step and the over etching step.
Dependencies are inferred from the claim text.