Methods for high temperature etching a material layer using protection coating

(canceled)

(canceled)

A method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer, comprising:

• etching a DARC layer disposed on a substrate while forming a passivation protection on the DARC layer, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber, wherein the DARC layer is a SiON layer, wherein the etching gas mixture include at least a silicon containing gas, a carbon fluorine containing gas, a halogen containing gas and a reacting gas;
• and
• controlling a temperature of the substrate support pedestal assembly at between about 160 degrees Celsius and about 250 degrees Celsius during the etching process.

(canceled)

A method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer, comprising:

• supplying an etching gas mixture includes a silicon containing gas, a carbon fluorine containing gas, a halogen containing gas and a reacting gas to etch a DARC layer disposed on a substrate while forming a passivation protection on the substrate, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber;
• and
• controlling a temperature of the substrate support pedestal assembly at between about 160 degrees Celsius and about 250 degrees Celsius during the etching process.