Monolithic Integration of Semiconductor Materials

A method for forming a semiconductor structure, comprising:

• providing a donor substrate having a trench therein and having a plurality of semiconductor layers epitaxially grown on top of one another on the donor substrate in such a way that at least a first semiconductor layer of the plurality of semiconductor layers is present in the trench, wherein the trench:
• (i) opens toward a top of the donor substrate,
• (ii) is defined by a monocrystalline bottom and non-crystalline sidewalls, and
• (iii) comprises a width in the range of 10 nm to 10 μm;
• providing a carrier substrate comprising:
• (i) a semiconductor substrate at a bottom of the carrier substrate,
• (ii) a first semiconductor device on the semiconductor substrate, and
• (iii) electrical contacts to the first semiconductor device at a top of the carrier substrate;
• bonding the donor substrate to the carrier substrate with the top of the donor substrate and the top of the carrier substrate facing each other;
• removing at least part of the donor substrate in such a way as to expose the first semiconductor layer, wherein the first semiconductor layer is grown on the monocrystalline bottom of the trench;
• and
• removing at least part of the exposed first semiconductor layer, thereby modifying the plurality of semiconductor layers.