Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer having a first plane and a second plane;
• a first electrode having a first region provided in the silicon carbide layer, a width of a second-plane-side end portion of the first region being less than a width of a first-plane-side end portion of the first region, a first inclination angle of a side surface of the first region with respect to a plane parallel to the first plane being equal to or greater than 60 degrees and equal to or less than 85 degrees;
• a second electrode facing the first electrode, the silicon carbide layer being interposed between the second electrode and the first electrode;
• a first gate electrode;
• a second gate electrode facing the first gate electrode, the first region being interposed between the second gate electrode and the first gate electrode;
• a first gate insulating layer provided between the first region and the first gate electrode;
• a second gate insulating layer provided between the first region and the second gate electrode;
• a first silicon carbide region of a first conductivity type provided in the silicon carbide layer;
• a second silicon carbide region of a second conductivity type provided between the first silicon carbide region and the first plane and between the first region and the first gate insulating layer;
• a third silicon carbide region of the second conductivity type provided between the first silicon carbide region and the first plane and between the first region and the second gate insulating layer;
• a fourth silicon carbide region of the first conductivity type provided between the second silicon carbide region and the first plane;
• a fifth silicon carbide region of the first conductivity type provided between the third silicon carbide region and the first plane and the first region interposed between the fifth silicon carbide region and the fourth silicon carbide region;
• a sixth silicon carbide region of the second conductivity type provided between the second-plane-side end portion of the first region and the first silicon carbide region and between the side surface of the first region and the first silicon carbide region and having a higher second-conductivity-type impurity concentration than the second silicon carbide region and the third silicon carbide region;
• and
• a seventh silicon carbide region of the second conductivity type provided between the first silicon carbide region and the sixth silicon carbide region and having a lower second-conductivity-type impurity concentration than the sixth silicon carbide region, a distance between the seventh silicon carbide region and the second plane being less than a distance between the second plane and the second silicon carbide region and a distance between the second plane and the third silicon carbide region.