Deposition Of Flowable Silicon-Containing Films
AssigneeApplied Materials, Inc.
InventorsLakmal C. Kalutarage, Mark Saly, David Thompson, Abhijit Basu Mallick, Tejasvi Ashok, Pramit Manna
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Abstract
Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.
Claims20
A processing method comprising exposing a substrate surface to a silicon-containing precursor and a co-reactant to deposit a flowable film, the silicon-containing precursor having at least one akenyl or alkynyl group.
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- exposing the substrate surface to a silicon-containing precursor and co-reactant to form a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the silicon containing precursor comprising a compound having any of Structures I-V
- where each of R1-R6 is independently selected from the group consisting of CR′CR″2, CCR′, H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, NR′2 and OR′,
- where R′ and R″ are independently selected from the group consisting of H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl, at least one of R1-R6 is selected from the group consisting of CR′CR″2 or CCR′, and the co-reactant comprises an ammonia plasma;
- and
- curing the flowable film to solidify the film and form a substantially seam-free gapfill.
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- exposing the substrate surface to a silicon-containing precursor and co-reactant to form a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the silicon containing precursor comprising one or more of tetravinylsilane (Si(CHCH2)4) or silicon tetraacetalide (Si(CCH)4), and the co-reactant comprises an ammonia plasma;
- and
- curing the flowable film to solidify the film and form a substantially seam-free gapfill.
Dependencies are inferred from the claim text.