Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

A method of forming silicon nitride, comprising:

• reacting a silicon chalcogenate precursor with a substrate to form silicon on the substrate, the silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4;
• reacting the silicon with a nitrogen-containing precursor to form nitrogen on the silicon;
• and
• repeating the reacting a silicon chalcogenate precursor and reacting the silicon with a nitrogen-containing precursor acts to form silicon nitride on the substrate.