Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a metal oxide over a first insulating film;
• forming a source electrode and a drain electrode over the metal oxide;
• and
• forming a second insulating film over and in contact with the metal oxide, the source electrode, and the drain electrode,
• wherein the second insulating film is formed in a vacuum chamber of a chemical vapor deposition apparatus by the steps of:
• supplying a source gas to the vacuum chamber and attaching the source gas to the metal oxide;
• evacuating the source gas;
• forming a first layer of the second insulating film by supplying an oxygen gas to the vacuum chamber and generating plasma on the metal oxide;
• and
• forming a second layer of the second insulating film by supplying a nitrogen gas to the vacuum chamber and generating plasma on the first layer,
• wherein the first layer comprises silicon and oxygen, and
• wherein the second layer comprises silicon and nitrogen.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first metal oxide over a first insulating film;
• forming a second metal oxide over the first metal oxide;
• forming a source electrode and a drain electrode over the second metal oxide;
• and
• forming a second insulating film over and in contact with the second metal oxide, the source electrode, and the drain electrode,
• wherein the second insulating film is formed by a plasma assisted atomic layer deposition method.