High Throughput Semiconductor Deposition System

A method of performing hydride vapor phase epitaxy (HVPE) deposition, the method comprising:

• providing at least one first source material and at least one first carrier gas flow to a first HVPE mixing zone coupled to a first deposition zone;
• providing at least one second source material and at least one second carrier gas flow to a second HVPE mixing zone coupled to a second deposition zone;
• heating the first deposition zone to a first temperature;
• heating the first HVPE mixing zone to a second temperature;
• heating the second deposition zone to a third temperature, wherein the third temperature is different from the first temperature;
• heating the second HVPE mixing zone to a fourth temperature;
• outputting, from the first HVPE mixing zone into the first deposition zone, first reactant gases produced from the at least one first source material and the at least one first carrier gas flow;
• outputting, from the second HVPE mixing zone into the second deposition zone, second reactant gases produced from the at least one second source material and the at least one second carrier gas flow;
• placing a substrate into the first deposition zone to grow a first layer from the first reactant gases;
• and
• placing the substrate into the second deposition zone to grow a second layer from the second reactant gases,
• wherein the heating of the first deposition zone to the first temperature and the heating of the second deposition zone to the third temperature are performed concurrently.