Method for producing r-t-b system sintered magnet

2:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein T1 in the R1-T1-X comprises Fe and M, where M is one or more selected from the group consisting of Al, Si, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo and Ag.

3:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein a molar ratio of [T1]/[X] in the R1-T1-X based sintered alloy compact is 13.6 or more.

4:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein a molar ratio of [T1]/[X] in the R1-T1-X based sintered alloy compact is 14 or more.

5:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein any heavy rare-earth element accounts for 1 mass % or less of the R1-T1-X based sintered alloy compact.

6:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein the step of providing an R1-T1-X based sintered alloy compact comprises pulverizing a raw material alloy to a size of not less than 1 μm and not more than 10 μm, thereafter pressing the pulverized raw material alloy in a magnetic field, and performing sintering.

7:

• The method for producing a sintered R-T-B based magnet of claim 6, wherein the step of providing an R1-T1-X based sintered alloy compact comprises, after the sintering, performing a high-temperature heat treatment at a temperature which is above 600° C. and below a sintering temperature.

8:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein the R2-Ga—Cu based alloy does not contain any heavy rare-earth element.

9:

• The method for producing a sintered R-T-B based magnet of claim 8, wherein Pr accounts for 50 mol % or more of the R2 in the R2-Ga—Cu based alloy.

10:

• The method for producing a sintered R-T-B based magnet of claim 8, wherein the R2 in the R2-Ga—Cu based alloy consists only of Pr (but is inclusive of inevitable impurities).

11:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein some of the R2 in the R2-Ga—Cu based alloy is a heavy rare-earth element, the heavy rare-earth element being contained in an amount of 10 mol % or less of the entire R2-Ga—Cu based alloy.

12:

• The method for producing a sintered R-T-B based magnet of claim 11, wherein some of the R2 in the R2-Ga—Cu based alloy is a heavy rare-earth element, the heavy rare-earth element being contained in an amount of 5 mol % or less of the entire R2-Ga—Cu based alloy.

13:

• The method for producing a sintered R-T-B based magnet of claim 11, wherein, in the R2-Ga—Cu based alloy, some of the R2 is a heavy rare-earth element, and Pr accounts for 50 mol % or more of the entire R2 excluding the heavy rare-earth element.

14:

• The method for producing a sintered R-T-B based magnet of claim 11, wherein, in the R2-Ga—Cu based alloy, some of the R2 is a heavy rare-earth element, and Pr accounts for the entire R2 excluding the heavy rare-earth element (disregarding inevitable impurities).

15:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein the temperature in the step of performing a heat treatment is not less than 480° C. and not more than 540° C.

16:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein, in the step of performing a heat treatment, an R12T114X phase in the R1-T1-X based sintered alloy compact reacts with a liquid phase occurring from the R2-Ga—Cu based alloy to generate an R6T13Z phase (where Z always includes Ga and/or Cu) at least partially inside the sintered magnet.

17:

• The method for producing a sintered R-T-B based magnet of claim 1, wherein the step of performing a heat treatment comprises applying and/or spreading a powder of the R2-Ga—Cu based alloy on at least a portion of the surface of the R1-T1-X based sintered alloy compact to place the R2-Ga—Cu based alloy in contact with at least a portion of the surface of the R1-T1-X based sintered alloy compact.

18:

• The method for producing a sintered R-T-B based magnet of claim 17, wherein the powder of the R2-Ga—Cu based alloy to be spread and/or applied on the surface of the R1-T1-X based sintered alloy compact is in an amount of not less than 0.2 parts by mass and not more than 0.5 parts by mass, relative to 100 parts by mass of the R1-T1-X based sintered alloy compact.