Non-volatile memory device and method of fabricating the same

A non-volatile memory device, comprising:

• memory cell strings, each memory cell string comprising a plurality of memory cells connected to one another in series;
• wordlines connected to control gates of the plurality of memory cells, respectively;
• sub-wordlines, at least one of the sub-wordlines being arranged between two adjacent wordlines;
• bitlines connected to first ends of the memory cell strings, respectively;
• a row decoder electrically connected to the plurality of memory cells via the wordlines and the sub-wordlines;
• and
• a column decoder electrically connected to the memory cell strings via the bitlines.

A method of fabricating a non-volatile memory device, the method comprising:

• forming a stacked structure by alternately and repeatedly forming one or more insulation layers and a plurality of conductive layers on a substrate, wherein the plurality of conductive layers comprise first conductive layers for forming control gates and second conductive layers for forming sub-gates, at least one of the sub-gates being formed between two adjacent control gates;
• forming via holes extending in a vertical direction that is normal to a main surface of the substrate by patterning the stacked structure;
• forming a data storage layer on a sidewall of each of the via holes;
• and
• forming a semiconductor pillar comprising a channel layer in a groove region defined by the data storage layer in each of the via holes.