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AssigneeSanDisk Technologies LLC
InventorsStella Achtenberg, Alon Eyal, Eran Sharon
Estimating the term…
Apparatus and method for performing burst mode programming in a memory system are disclosed. A memory system may program data in different modes, such as normal mode programming and burst mode programming. Burst mode programming programs data into the memory device faster than normal mode programming. MLC Blocks for burst mode programming may be selected based on one or more criteria, such as block age, block programming speed, or the like. Further, one or more burst mode TRIM settings, which may include a program voltage TRIM setting, a step-up voltage TRIM setting, skip verify level, and a program pulse width, may be used to program the blocks selected for burst mode programming. In this regard, burst mode programming may be performed more quickly than normal mode programming.
A non-volatile memory system comprising:
A non-volatile memory system comprising:
A non-volatile memory system comprising:
The non-volatile memory of claim 14, further comprising normal programming circuitry configured to program the data, programmed directly to the MLC memory in burst programming mode, into another section of MLC memory using a normal programming mode, the normal programming mode using different error correction coding (ECC) than used in the burst programming mode.
A non-volatile memory system comprising:
Dependencies are inferred from the claim text.