Memory cell having a magnetic josephson junction device with a doped magnetic layer

A memory cell, wherein the memory cell is configured to be either in a voltage state or a zero state, the memory cell comprising:

• a read bit-line;
• a read word-line;
• a magnetic Josephson junction (MJJ) device connected to the read bit-line via a first inductor, the first MJJ device comprising at least a first layer formed above a second layer and a third layer formed below the second layer, wherein the first layer is a free magnetic layer, the second layer is a non-magnetic layer, and the third layer is a fixed magnetic layer, wherein the free magnetic layer comprises a nickel-iron alloy doped with only Vanadium, wherein a concentration of the Vanadium is in a range between 5 atomic percent to 20 atomic percent, wherein the fixed magnetic layer comprises a nickel-iron alloy doped with only Vanadium, and wherein a concentration of the Vanadium is in a range between 5 atomic percent to 10 atomic percent;
• and
• a second magnetic Josephson junction (MJJ) device connected to the read bit-line via a second inductor, the second MJJ device comprising at least a fourth layer formed above a fifth layer and a sixth layer formed below the fifth layer, wherein the fourth layer is a free magnetic layer, the fifth layer is a non-magnetic layer, wherein the sixth layer is a fixed magnetic layer, wherein the free magnetic layer comprises a nickel-iron alloy doped with only Vanadium, wherein a concentration of the Vanadium is in a range between 5 atomic percent to 20 atomic percent, wherein the fixed magnetic layer comprises a nickel-iron alloy doped with only Vanadium, and wherein a concentration of the Vanadium is in a range between 5 atomic percent to 10 atomic percent, wherein during a read operation, the read word-line is configured to apply a word read current to the memory cell and the read bit-line is configured to apply a bit read current to the first MJJ device via the first inductor and to the second MJJ device via the second inductor to change a state of the memory cell from the zero state to the voltage state.