Semiconductor device

A semiconductor device comprising:

• a flip-flop circuit having a circular structure in which a first inverter circuit, a first connection line, a second inverter circuit, and a second connection line are coupled in order, the first connection line including a first node, the second connection line including a second node;
• a control line;
• a first P-type transistor provided between the first node and the control line;
• a first non-volatile storage element provided between the first node and the control line, the first non-volatile storage element being coupled in series to the first P-type transistor;
• a second P-type transistor provided between the second node and the control line;
• and
• a second non-volatile storage element provided between the second node and the control line, the second non-volatile storage element being coupled in series to the second P-type transistor, wherein
• the first non-volatile storage element is one of a first magnetic tunnel junction element and a first resistance change element, the first magnetic tunnel junction element including a first pinned layer, a first tunnel barrier layer, and a first free layer that are arranged in order from a position close to the control line, the first resistance change element including a first electrode layer, a first insulating layer, and a first ion layer that are arranged in order from a position close to the control line, and
• the second non-volatile storage element is one of a second magnetic tunnel junction element and a second resistance change element, the second magnetic tunnel junction element including a second pinned layer, a second tunnel barrier layer, and a second free layer that are arranged in order from a position close to the control line, the second resistance change element including a second electrode layer, a second insulating layer, and a second ion layer that are arranged in order from a position close to the control line.