Magnetic memory

Abstract

According to one embodiment, the magnetic memory includes a structure including a first magnetic layer and a conductive layer, a second magnetic layer, an intermediate layer, a third magnetic layer, and a fourth magnetic layer. The first magnetic layer is provided between the second magnetic layer and the conductive layer. The intermediate layer is provided between the second magnetic layer and the first magnetic layer. The third magnetic layer is provided between a second electrode and the intermediate layer. The fourth magnetic layer is provided between a first electrode and the intermediate layer. Further, the magnetic memory includes a first conductive-type first semiconductor layer electrically connected with the first electrode, a first conductive-type second semiconductor layer electrically connected with the second magnetic layer, and a second conductive-type third semiconductor layer electrically connected with the first semiconductor layer and the second semiconductor layer.

Dependencies are inferred from the claim text.