Focus centering method for digital lithography
AssigneeApplied Materials, Inc.
InventorsYeishin TUNG, Douglas Joseph VAN DEN BROEKE, Antoine P. MANENS, Jang Fung CHEN
Life of this patent
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Abstract
Embodiments disclosed herein generally relate to adjusting a focus setting for a digital lithography system. The method includes scanning a surface of a photoresist. The photoresist is formed on a substrate. A focus setting for the digital lithography system is determined. A plurality of exposure location on the photoresist are located. A sidewall width of the exposure is measured for a plurality of focus settings. The focus setting is adjusted in response to determining a minimum sidewall width.
Claims20
A method of adjusting focus setting for a digital lithography system, comprising:
- scanning a surface of a photoresist formed on a substrate;
- determining a focus setting for the digital lithography system, comprising:
- locating a plurality of exposures on the photoresist;
- and
- measuring a sidewall width of each exposure for a plurality of focus settings;
- and
- adjusting the focus setting in response to determining a minimum sidewall width.
A computer system for adjusting a focus setting for a digital lithography system, comprising:
- a processor;
- and
- a memory storing instructions that, when executed by the processor, cause the computer system to:
- scanning a surface of a photoresist formed on a substrate;
- determining a focus setting for the digital lithography system, comprising:
- locating a plurality of exposures on the photoresist;
- and
- measuring a sidewall width of each exposure for a plurality of focus settings;
- and
- adjusting the focus setting in response to determining a minimum sidewall width.
A non-transitory computer-readable medium storing instructions that, when executed by a processor, cause a computer system to adjust a focus setting for a digital lithography system, by performing the steps of:
- scan a surface of a photoresist formed on a substrate;
- determine a focus setting for the digital lithography system, comprising:
- locate a plurality of exposures on the photoresist;
- and
- measure a sidewall width of each exposure for a plurality of focus settings;
- and
- adjust the focus setting in response to determining a minimum sidewall width.
Dependencies are inferred from the claim text.