Optical modulator and method of manufacturing same
AssigneesPhotonics Electronics Technology Reserach Association, The University of Tokyo
InventorsJunichi FUJIKATA, Shigeki TAKAHASHI, Mitsuru TAKENAKA, Younghyun KIM
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Abstract
An optical phase modulator 100 according to an embodiment of this disclosure comprises a rib-type waveguide structure 110 comprising: a PN junction 106 comprising Si and formed in a lateral direction on a substrate; and a Si1-xGex layer 108 that is doped with a p-type impurity and comprises at least one layer laminated on the PN junction 106, so as to be electrically connected to the PN junction 106.
Claims14
An optical phase modulator comprising a rib-type waveguide structure,
- wherein the rib-type waveguide structure comprises:
- a PN junction or a PIN junction that comprises Si or Si1-yGey and is formed in a lateral direction on a substrate;
- and
- a Si1-xGex layer that comprises at least one layer, is doped by an impurity to exhibit a first conductivity type or a second conductivity type, and is stacked on the PN junction or the PIN junction to be electrically connected to the PN junction or the PIN junction.
A method for manufacturing an optical phase modulator, comprising:
- forming a PN junction or a PIN junction that comprises Si or Si1-yGey and is formed in a lateral direction;
- doping regions adjacent to the PN junction or the PIN junction with a first conductivity type and a second conductivity type to form a first electrode of a first conductivity type and a second electrode of a second conductivity type;
- and
- forming, on the PN junction or the PIN junction, an Si1-xGex layer that comprises at least one layer, is doped by an impurity to exhibit the first conductivity type or the second conductivity type, and is electrically connected to the PN junction or the PIN junction.
Dependencies are inferred from the claim text.