Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device including

• a first substrate having one surface,
• a second substrate having one surface and bonded to the first substrate such that the one surface of the second substrate faces the one surface of the first substrate,
• a sensing part arranged between the first substrate and the second substrate,
• a first pad portion arranged on the one surface of the first substrate and electrically connected to the sensing part, and
• a second pad portion arranged on the one surface of the second substrate and electrically connected to the first pad portion, the method comprising:
• preparing the first substrate;
• forming the first pad portion on the one surface of the first substrate by forming a metal film including a Ti layer as an outermost surface and by patterning the metal film;
• preparing the second substrate;
• forming the second pad portion on the one surface of the second substrate by forming a metal film including a Ti layer as an outermost surface and by patterning the metal film;
• removing an oxide film formed on the Ti layer of the first pad portion and an oxide film formed on the Ti layer of the second pad portion by vacuum-annealing the first substrate and the second substrate;
• and
• bonding the first pad portion and the second pad portion together.