Compositions and methods using same for carbon doped silicon containing films

A method for depositing a carbon doped silicon containing film selected from a carbon doped silicon oxide film and a carbon doped silicon oxynitride film, the method comprising:

• placing a substrate into a reactor;
• heating the reactor to one or more temperatures ranging from about 2−5100° C. to about 700° C.;
• introducing at least one cyclic carbosilane precursor selected from the group consisting of a cyclic halocarbosilane, a cyclic haloaminocarbosilane, a cyclic aminocarbosilane and combinations thereof;
• introducing a nitrogen source under conditions sufficient to react with the at least one cyclic carbosilane precursor and form a carbon doped silicon nitride film;
• and
• optionally exposing the silicon carbonitride film to an oxygen source to convert the silicon carbonitride film to the film at one or more temperatures ranging from about 100° C. to 1000° C.

A method for depositing a silicon containing film selected from a silicon carbide film and a carbon doped silicon nitride film, the method comprising:

• placing a semi-conductor substrate into a reactor;
• heating the reactor to one or more temperatures ranging from about 2−5100° C. to about 700° C. and optionally maintaining the reactor at a pressure of 100 torr or less;
• introducing at least one cyclic carbosilane selected from the group consisting of a cyclic halocarbosilane, a cyclic haloaminocarbosilane, and combinations thereof;
• introducing into the reactor a nitrogen-containing plasma source under conditions sufficient to react with the carbosilane precursor and form the film.

A method for depositing a carbon doped silicon oxide film, the method comprising:

• placing a substrate into a reactor;
• introducing at least one cyclic carbosilane precursor having the following Formulae I and II:
• wherein X1, X2, X3, X4, X5, and X6 are each independently chosen from a hydrogen atom;
• a halide atom selected from F, Cl, Br, and I;
• an amino group having the formula NR1R2 wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a C1 to C10 linear alkyl group;
• a C3 to C10 branched alkyl group;
• a C3 to C10 cyclic alkyl group;
• a C3 to C10 alkenyl group;
• a C4 to C10 aryl group;
• and a C4 to C10 heterocyclic group;
• introducing a nitrogen source under conditions sufficient to react with the at least one cyclic carbosilane precursor and form a carbon doped silicon nitride film;
• and,
• exposing the carbon doped silicon nitride film to an oxygen source under conditions sufficient to convert the carbon doped silicon nitride film to the carbon doped silicon oxide film.