Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

Abstract

There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 μm and not more than 50 μm and having an average aspect ratio of not less than 4 and not more than 50.

Dependencies are inferred from the claim text.