Process for Coating a Conductive Component and Conductive Component Coating

Process for coating conductive component, characterized in that the conductive component is in contact with a support, capable of undergoing polarity inversions within a plasma reactor, comprising the steps of:

• a) Cleaning of the surface of the conductive component by electron bombardment, wherein the gases in the plasma atmosphere are selected from the group consisting of hydrogen, oxygen, argon, nitrogen or a combination thereof, in a temperature range between 20 and 300° C. and a working pressure between 0.1 and 10 Torr, with positive potential support;
• b) Deposition of mechanical support in the conductive component comprising gas ion bombardment selected from a combination of two or more gases of the group:
• hydrogen, oxygen, argon, nitrogen, methane, acetylene, or other ionizable hydrocarbon gas, in a temperature range between 200 and 650° C., working pressure between 0.1 and 10 Torr and voltage between −200 and −1000 V applied to the conductor component support;
• c) Topographic modification comprising gas ion bombardment selected from a combination of two or more gases of the group:
• hydrogen, oxygen, argon, nitrogen, methane, acetylene, or other ionizable hydrocarbon gas, in a temperature range between 200 and 650° C., working pressure between 0.1 and 10 Torr and voltage between −200 and −1000 V applied to the conductor component support;
• d) Deposition of the chemical support layer in the conducting component, by gas ion bombardment, wherein the gases are selected from the group consisting of gaseous or liquid precursors, containing elements with chemical affinity with the carbon, in a temperature range between 200 and 350° C., working pressure between 0.1 and 10 Torr, connected time of the plasma source between 75 and 90% of the time of a DC source pulse, which operates at a frequency of 50 to 150 kHz, and voltage between −300 and −1000 V applied to the conductor component support;
• e) Deposition of amorphous carbon layer on the surface of the chemical support layer by gaseous hydrocarbon ions bombardment, wherein the gases in the plasma atmosphere are selected from the group consisting of at least one liquid precursor with at least one metal radical or the combination of such precursor with at least one ionizable hydrocarbon gas and generating ions which are deposited on the component, in a temperature range of 200 to 350° C., working pressure between 1 and 3 Torr, connected time of the plasma source between 75 and 90% of the time of a DC source pulse, which operates at a frequency of 50 to 150 kHz and voltage between −300 and −1000 V applied to the conductive component support.