Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME
AssigneeL'Air Liquide, Societe Anonyme pour I'Etude et l'Exploitation des Procedes Georges Claude
InventorsJean-Marc GIRARD, Peng ZHANG, Antonio SANCHEZ, Manish KHANDELWAL, Gennediy ITOV, Reno PESARESI
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Abstract
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
Claims17
An ALD silicon and oxygen containing film formation process, the process comprising the steps of:
- depositing a silicon and oxygen containing film on a substrate by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is a halogen atom or an amino group [—NR2] and each R is independently selected from the group consisting of H;
- a C1-C6 hydrocarbyl group;
- or a silyl group [SiR′3] with each R′ being independently selected from H or a C1-C6 hydrocarbyl group.
An ALD silicon oxide film formation process, the process comprising the steps of:
- depositing a silicon oxide film on a substrate at a rate ranging from approximately 2.1 A/cycle to approximately 3.1 A/cycle by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is a halogen atom or an amino group [—NR2] and each R is independently selected from the group consisting of H or a C1-C6 hydrocarbyl group.
Dependencies are inferred from the claim text.