Mems devices having tethering structures

A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:

• receiving a carrier wafer bonded to an intermediate oxide layer;
• bonding a MEMS wafer to the intermediate oxide layer;
• etching the MEMS wafer to form a separation trench;
• forming a MEMS structure in or over the MEMS wafer, wherein the MEMS structure includes a dielectric structure and a tethering structure spanning the separation trench;
• etching the carrier wafer, the intermediate oxide layer, and the MEMS wafer to form a recess;
• removing a first portion of material from the dielectric structure overlying the recess;
• and
• plucking the MEMS structure from the carrier wafer by breaking the tethering structure.

A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:

• receiving a carrier wafer;
• bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer;
• forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer;
• forming a separation trench that laterally surrounds the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections that each extend over the separation trench to suspend the die over the upper surface of the carrier wafer;
• and
• translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer leaving the carrier wafer intact.