Semiconductor arrangement and formation thereof

A method of forming a semiconductor arrangement comprising:

• forming an oxide layer over a first metal connect and a second metal connect disposed on a substrate;
• patterning the oxide layer to form a first oxide structure over the first metal connect and a second oxide structure over the second metal connect;
• forming a first metal layer over the first oxide structure and the second oxide structure, adjacent a sidewall of the first oxide structure, and contacting the substrate;
• and
• bonding a wafer comprising a MEMS device over the first metal layer, wherein the MEMS device is disposed within a MEMS area between the first oxide structure and the second oxide structure.

A method of forming a semiconductor arrangement comprising:

• forming an oxide layer over a first metal connect and a second metal connect disposed on a substrate;
• patterning the oxide layer to form a first opening exposing the first metal connect and a second opening exposing the second metal connect;
• forming a first metal layer in the first opening, in the second opening, and over the oxide layer;
• bonding a wafer comprising a MEMS device to the first metal layer;
• forming a second metal layer over the wafer;
• and
• patterning the second metal layer to define a bonding pad and a squish prevention node between the bonding pad and the MEMS device.