Semiconductor device including field effect transistor and a method for fabricating the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsFang-Liang LU, CheeWee LIU, Chi-Wen LIU, Shih-Hsien HUANG, I-Hsieh WONG
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Abstract
In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.
Claims21
A method of fabricating a field effect transistor, comprising:
- forming a fin structure made of a first semiconductor material, the fin structure including source and drain regions having dopants and protruding from an isolation insulating layer disposed over a substrate;
- after forming the fin structure including the source and drain regions having the dopants, forming a gate structure over a part of the fin structure, thereby defining a channel region between the source and drain regions having the dopants in the fin structure;
- and
- after the gate structure is formed, performing laser annealing on the fin structure, thereby activating the dopants in the source and drain regions,
- wherein the field effect transistor includes the gate structure, and the source and drain regions.
A method of fabricating a field effect transistor, comprising:
- forming a fin structure made of a first semiconductor material, the fin structure including source and drain regions having dopants and protruding from an isolation insulating layer disposed over a substrate;
- after forming the fin structure including the source and drain regions having the dopants, performing a first annealing on the fin structure;
- after the first annealing is performed, forming a gate structure over a part of the fin structure, thereby defining a channel region between the source region and the drain region in the fin structure;
- and
- after the gate structure is formed, performing a second annealing on the fin structure, thereby activating the dopants in the source region and the drain region, wherein:
- the first semiconductor material is n-type Ge,
- the second annealing is laser annealing, and
- the field effect transistor includes the gate structure, and the source and drain regions.
19-20. (canceled)
A method of fabricating a field effect transistor, comprising:
- forming a fin structure made of Si1-xGex, where 0.2<x≦1, the fin structure having source and drains having dopants and protruding from an isolation insulating layer disposed over a substrate;
- after forming the fin structure including the source and drain regions having the dopants, performing a first annealing on the fin structure at a temperature of 300° C. to 850° C.;
- after the first annealing is performed, forming a gate structure over a part of the fin structure, thereby defining a channel region between the source region and the drain region in the fin structure;
- and
- after the gate structure is formed, performing a second annealing on the fin structure, thereby activating the dopants in the source and drain regions, wherein:
- the second annealing is laser annealing,
- the Si1-x Gex is doped with at least one of P, As, or Sb,
- after the second annealing, a concentration of electrically active dopants in the source and the drain is in a range from 1.0×1020 cm−3 to 5.0×1020 cm−3, and a concentration of electrically active dopants in the channel region is 1.0×1018 cm−3 to 9.0×1019 cm−3, and
- the field effect transistor includes the gate structure, and the source and drain regions.
Dependencies are inferred from the claim text.