Image lag free pixel
AssigneeX-Fab Semiconductor Foundries AG
InventorsDaniel GAEBLER, Xuezhou CAO
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor pixel (200) comprising a photo-sensitive element (101) for generating a charge in response to incident light; a plurality of charge storage elements (103); a plurality of transfer gates (102) for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections (201) for placing at least two of the plurality of charge storage elements in mutual electrical contact.
Claims21
A CMOS image sensor pixel comprising:
- a photosensitive element for generating a charge in response to incident light;
- a plurality of charge storage elements;
- a plurality of transfer gates for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements;
- and
- one or more first electrical connections for placing at least two of the plurality of charge storage elements in mutual electrical contact.
A CMOS image sensor pixel comprising:
- an arrangement of two or more photosensitive elements, each configured to generate a charge in response to incident light;
- a plurality of charge storage elements;
- a plurality of transfer gates for enabling the transfer of charge between each of the two or more photosensitive elements and an associated one of the charge storage elements, each transfer gate comprising a gate for controlling the state of the transfer gate in response to an applied voltage;
- one or more first electrical connections for placing at least two of the plurality of charge storage elements in mutual electrical contact;
- and
- one or more second electrical connections for placing the plurality of gates in mutual electrical contact.
A CMOS image sensor pixel comprising:
- an arrangement of two or more photosensitive elements, each configured to generate a charge in response to incident light;
- a plurality of charge storage elements;
- a plurality of transfer gates for enabling the transfer of charge between each of the two or more photosensitive elements and an associated one of the charge storage elements;
- one or more first electrical connections for placing at least two of the plurality of charge storage elements in mutual electrical contact;
- and
- one or more second electrical connections for controlling the plurality of transfer gates in parallel.
Dependencies are inferred from the claim text.