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US 2018/0019206 A1Published application
Electric fuse structure and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorYukihiro Nagai
Life of this patent
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Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and first fuse branches and second fuse branches are formed in the substrate, in which the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches include different sizes. Next, fuse elements are formed to connect the first fuse branches and the second fuse branches.
Claims20
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming first fuse branches and second fuse branches on the substrate, wherein the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches comprise different sizes;
- and
- forming fuse elements to connect the first fuse branches and the second fuse branches.
1 more element
A semiconductor device, comprising:
- fuse elements that can be disconnected by irradiating a laser beam;
- first fuse branches connected to one side of the fuse elements;
- and
- second fuse branches connected to another side of the fuse elements, wherein the second fuse branches comprise different sizes.
1 more element
Dependencies are inferred from the claim text.