Method for processing a wafer, and layer stack
AssigneeInfineon Technologies AG
InventorFrancisco Javier Santos Rodriguez
Life of this patent
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Abstract
In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer and than the useful layer. The support layer has a depression, which exposes the sacrificial region. The method further includes forming at least one channel in the exposed sacrificial region by means of the processing fluid. The channel connects the depression to an exterior of the layer stack.
Claims26
A method for processing a wafer, the method comprising:
- forming a layer stack, comprising a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, at least one of a lower mechanical or chemical resistance than the support layer and than the useful layer;
- wherein the support layer has a depression, which exposes the sacrificial region;
- forming at least one channel in the exposed sacrificial region by means of the processing fluid, wherein the channel connects the depression to an exterior of the layer stack.
A layer stack, comprising:
- a support layer and a useful layer;
- a depression, which extends through the support layer or at least into the latter;
- at least one channel, which extends through between the support layer and the useful layer from the depression to an exterior of the layer stack.
Dependencies are inferred from the claim text.