Electronic device and operating method thereof

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory comprises:
• a plurality of resistive storage cells, each operable to store data and to receive a writing current to write data;
• a fail bit counter configured to count the number of resistive storage cells in which data are not normally written, among the plurality of resistive storage cells, and determine a write operation as a fail when the count value exceeds a reference value or determine the write operation as a pass when the count value is equal to or less than the reference value;
• a set information generation unit configured to generate set information corresponding to a set condition, and update the set information to strengthen the set condition when the determination result is the fail or update the set information to ease the set condition when the determination result is the pass;
• and
• a write current generation unit configured to control a pulse width or an amount of a write current flowing through a resistive storage cell among the plurality of resistive storage cells, according to the set condition.