Back to results
US 2018/0006203 A1Published application
Ultraviolet emitting device
AssigneeRayVio Corporation
InventorsSaijin Liu, Xiaoning Wang, Yitao Liao, Douglas A. Collins
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A reflective layer is disposed on a surface of the mount surrounding the UVLED.
Claims21
A device comprising:
- a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation;
- a mount comprising electrical connection pads formed on a top surface of the mount, wherein the UVLED is disposed on the mount and attached to the electrical connection pads;
- and
- a reflective layer disposed over portions of the electrical connection pads in direct contact with the electrical connection pads, surrounding the UVLED, wherein a first portion of the reflective layer is disposed over the electrical connection pads in direct contact with the electrical connection pads, and a second portion of the reflective layer is in direct contact with a top surface of the mount.
1 more element
(canceled)
A method comprising:
- disposing first and second electrical pads on a mount;
- disposing a reflective layer overlying and in direct contact with first portions of the first and second electrical pads;
- patterning the reflective layer to form an opening that exposes second portions of the first and second electrical pads;
- and
- electrically and physically connecting to the first and second electrical pads a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation.
2 more elements
A device comprising:
- a light emitting diode (UVLED) comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation;
- a mount comprising electrical connection pads formed on a top surface of the mount, wherein the UVLED is disposed on the mount and attached to the electrical connection pads;
- and
- a reflective layer disposed over portions of the electrical connection pads in direct contact with the electrical connection pads, surrounding the UVLED, wherein the reflective layer comprises a Ti layer in direct contact with the electrical connection pad and an Al layer disposed on the Ti layer.
1 more element
17-20. (canceled)
Dependencies are inferred from the claim text.