Stacked capacitor with symmetric leakage and break-down behaviors
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Eduard A. Cartier, Vijay Narayanan, Adam M. Pyzyna
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Abstract
A layered structure including a tri-stack dielectric layer and a plurality of metal layers insulated from each other by the tri-stack dielectric layer. The plurality of metal layers includes a set of first-type metal layers and a set of second-type metal layers. An adjacent pair of the plurality of metal layers includes a first-type metal layer and a second-type metal layer. The tri-stack dielectric layer includes a first tri-stack layer including Al2O3, a second tri-stack layer including HfO2; and a third tri-stack layer including Al2O3.
Claims20
A layered structure, comprising:
- a tri-stack dielectric layer;
- and
- a plurality of metal layers insulated from each other by the tri-stack dielectric layer;
- wherein the plurality of metal layers comprises a set of first-type metal layers and a set of second-type metal layers;
- wherein an adjacent pair of the plurality of metal layers comprises a first-type metal layer and a second-type metal layer;
- wherein the tri-stack dielectric layer comprises:
- a first tri-stack layer comprising Al2O3;
- a second tri-stack layer comprising HfO2;
- and
- a third tri-stack layer comprising Al2O3.
A stacked planar capacitor, comprising:
- a first metal layer;
- a first tri-stack dielectric layer disposed over the first metal layer;
- a second metal layer disposed over the first tri-stack dielectric layer;
- a second tri-stack dielectric layer disposed over the second metal layer;
- and
- a third metal layer disposed over the second tri-stack dielectric layer,
- wherein each of the first tri-stack dielectric layer and the second tri-stack dielectric layer comprises:
- a first tri-stack layer comprising Al2O3;
- a second tri-stack layer comprising HfO2;
- and
- a third tri-stack layer comprising Al2O3.
A method to form a planar capacitor, comprising:
- providing a first metal layer,
- disposing a first tri-stack dielectric layer on the first metal layer;
- disposing a second metal layer on the first tri-stack dielectric layer;
- disposing a second tri-stack dielectric layer on the second metal layer;
- and
- disposing a third metal layer on the second tri-stack dielectric layer,
- wherein each of the first tri-stack dielectric layer and the second tri-stack dielectric layer comprises:
- a first tri-stack layer comprising Al2O3;
- a second tri-stack layer comprising HfO2;
- and
- a third tri-stack layer comprising Al2O3.
Dependencies are inferred from the claim text.