Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorSun Kak HWANG
Life of this patent
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Abstract
There are provided a manufacturing method of a semiconductor device. A manufacturing method of a semiconductor device includes forming a preliminary source stack structure including a first source layer, a first protective layer, a sacrificial layer, a second protective layer, and a second source layer, which are sequentially stacked in the recited order, forming channel layers extending through the second source layer and partially inside the first source layer, and growing a first region of an interlayer source layer from each channel layer, the first region of the interlayer source layer surrounding each channel layer in a region between the first and second protective layers.
Claims14
A method for manufacturing a semiconductor device, the method comprising:
- forming a preliminary source stack structure including a first source layer, a first protective layer, a sacrificial layer, a second protective layer, and a second source layer, which are sequentially stacked in the recited order;
- forming channel layers extending through the second source layer and partially inside the first source layer;
- and
- growing a first region of an interlayer source layer from each channel layer, the first region of the interlayer source layer surrounding each channel layer in a region between the first and second protective layers.
Dependencies are inferred from the claim text.