Switch device performance improvement through multisided biased shielding

An integrated radio frequency (RF) circuit structure, comprising:

• an active device on a first surface of an isolation layer;
• means for back-biasing a body of the active device arranged on a second surface opposite the first surface of the isolation layer;
• and
• means for shielding the active device, the shielding means arranged distal from the back-biasing means and coupled to the back-biasing means with a via.

A radio frequency (RF) front end module, comprising:

• an integrated radio frequency (RF) circuit structure, comprising a switch transistor on a first surface of an isolation layer, backside metallization on a second surface opposite the first surface of the isolation layer, and front-side metallization coupled to the backside metallization with a via and arranged distal from the backside metallization;
• the via, the front-side metallization, and the backside metallization at least partially enclosing the switch transistor;
• and
• an antenna coupled to an output of the switch transistor.