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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Abe, Masayuki Tanno, Yoshinori Kuwabara
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[Object] An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface. [Means to solve the Problems] In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.
A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium, applying said slurry to an oxide single crystal substrate, and heating said substrate with the slurry on it whereby said substrate is modified as Li is diffused into the substrate from the surface thereof.
A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium, applying said slurry to an oxide single crystal substrate, burying said oxide single crystal substrate with said slurry in a powder containing a Li compound same as the said Li compound, and heating said substrate whereby said substrate is modified as Li is diffused into the substrate from the surface thereof.
A method of manufacturing an oxide single crystal substrate for a surface acoustic wave device characterized by comprising steps of preparing a slurry by dispersing a powder containing a Li compound in a medium, applying said slurry to a surface of an oxide single crystal substrate cut from an oxide single crystal ingot having a roughly congruent composition which has been subjected to single polarization treatment, burying said oxide single crystal substrate with said slurry in a powder containing a Li compound same as said Li compound, and heating said substrate to thereby modify it through diffusion of Li into said substrate from the surface thereof in a manner such that a profile of Li concentration occurs wherein the greater the depth is, the lower the Li concentration is.
Dependencies are inferred from the claim text.